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DS2430A
MEMORY
The memory of the DS2430A consists of three separate sections, called data memory, application
register, and status register (Figure 5). The data memory and the application register each have its own
intermediate storage area called scratchpad that acts as a buffer when writing to the device. The data
memory can be read and written as often as desired. The application register, however, is one-time
programmable only. Once the application register is programmed, it is automatically write protected. The
status register indicates whether the application register is already locked or whether it is still available
for storing data. As long as the application register is unprogrammed, the status register reads FFh.
Copying data from the register scratchpad to the application register clears the 2 least significant bits of
the status register, yielding an FCh the next time one reads the status register.
DS2430A MEMORY MAP Figure 5
MEMORY FUNCTION COMMANDS
The Memory Function Flow Chart (Figure 6) describes the protocols necessary for accessing the different
memory sections of the DS2430A. An example is shown later in this document.
WRITE SCRATCHPAD [0Fh]
After issuing the Write Scratchpad command, the master must first provide a 1-byte address, followed by
the data to be written to the scratchpad for the data memory. The DS2430A automatically increments the
address after every byte it receives. After having received a data byte for address 1Fh, the address counter
wraps around to 00h for the next byte and writing continues until the master sends a Reset Pulse.
READ SCRATCHPAD [AAh]
This command is used to verify data previously written to the scratchpad before it is copied into the final
storage EEPROM memory. After issuing the Read Scratchpad command, the master must provide the 1-
byte starting address from where data is to be read. The DS2430A automatically increments the address
after every byte read by the master. After the data at address 1Fh has been read, the address counter wraps
around to 00h for the next byte and reading continues until the master sends a Reset Pulse.
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相关代理商/技术参数
DS2430AP+TR 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:256-Bit 1-Wire EEPROM
DS2430AT 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256-Bit 1-Wire EEPROM
DS2430AV 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256-Bit 1-Wire EEPROM
DS2430AX 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS2430AX#T&R 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS2430AX#U 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS2430AX-S 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS2430AX-S#T&R 制造商:Maxim Integrated Products 功能描述: